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MBRA160T3G, NRVBA160T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
60
V
Average Rectified Forward Current
(At Rated VR, TC
= 105
°C)
IO
1.0
A
Average Rectified Forward Current
(At Rated VR, TC
= 70
°C)
IO
2.1
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
60
A
Storage/Operating Case Temperature
Tstg, TC
?55 to +150
°C
Operating Junction Temperature (Note 1)
TJ
?55 to +150
°C
Voltage Rate of Change
(Rated VR, TJ
= 25
°C)
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction?to?Lead (Note 2)
Thermal Resistance, Junction?to?Ambient (Note 2)
RJL
RJA
35
86
°C/W
2. Mounted on 2″
Square PC Board with 1
″
Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage
(Note 3)
(IF
= 1.0 A)
VF
TJ
= 25
°C
TJ
= 125
°C
V
0.510
0.475
Maximum Instantaneous Reverse Current
(VR
= 60 V)
IR
TJ
= 25
°C
TJ
= 125
°C
mA
0.2
20
3. Pulse Test: Pulse Width ≤
250
s, Duty Cycle ≤
2.0%.
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